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General Specification：
(1) Display format : 128 ´64dot-matrix ; 1/ 64 duty.
(2) Construction : STN LCD, COG Type
(3) Controller : S6B0724
(4) 3.0V single power input. Internal Built-in DC/DC converter for LCD driving.
(5) Width temperature type.
Parameter | Stand Value | Unit |
Dot size | 0.45(W) ´ 0.49(H) | mm |
Dot pitch | 0.475(W) ´ 0.515(H) | mm |
Viewing area | 65.5 (W) ´ 38.0(H) | mm |
Module size | 90.5(W) ´63.2(H) ´ 10.0 max (T) | mm |
Parameter | Symbol | Min | Max | Unit | |
Logic Circuit Supply Voltage | VDD-VSS | 3.0 | 3.3 | V | |
LCD Driving Voltage | VDD-VO | 8.2 | 8.6 | V | |
Input Voltage | VI | VSS | VDD | V | |
Normal temp. type | Operating Temp. | TOP | -10 | 60 | °C |
Storage Temp. | TSTG | -20 | 70 | °C | |
Parameter | Symbol | Condition | Min | Typ | Max | Unit | Note |
----- Electronic Characteristics ----- | |||||||
Logic Circuit Supply Voltage | VDD-VSS | -- | 3.0 | --- | 3.3 | V |
|
LCD Driving Voltage | VDD-VO | 25 °C | -- | 8.6 | -- | V |
|
Input Voltage | VIH | -- | 0.7 VDD | -- | VDD | V |
|
VIL | -- | VSS | -- | 0.3 VDD | V |
| |
Logic Supply Current | IDD | VDD =3.0V | -- | 40 | -- | uA |
|
----- Optical Characteristics ----- | |||||||
Contrast | CR | STN type |
| 8.6 |
|
|
|
Rise Time | tr | 25°C | -- | 140 | -- | ms | Note 2 |
Fall Time | tf | 25°C | -- | 240 | -- | ms | |
Viewing Angle Range | q f | 25°C & CR³2 | -- | 40 | -- |
Deg. | Note 3 |
q b | -- | 35 | -- | ||||
q l | -- | 35 | -- | ||||
q r | -- | 35 | -- | ||||
Frame Frequency | fF | 25°C | -- | 70 | -- | Hz |
|
----- LED Back-light(Green) Characteristics ----- | |||||||
Forward Voltage | VF | -- | -- | 3.0 | -- | V | Supply Voltage between A&K |
Forward Current | IF | VF=3.0V | -- | 15 | -- | mA |
|
Bare LED Luminous intensity | VF=3.0V | -- | -- | -- | cd/m2 |
| |
LCM Luminous intensity | VF=3.0V | -- |
| -- | cd/m2 |
| |
*************************************************************************
TFT-LCD technology, detailed process
Working principle of TFT-LCD liquid crystal display
The manufacturing process of thin film transistor liquid crystal display has the following parts: TFT array is formed on the TFT substrate; forming a color filter pattern and ITO conductive layer on the color filter substrate; with two substrates to form a liquid crystal box installation; peripheral circuit, backlight module assembly assembly.
1. process for forming TFT array on TFT substrate
TFT has realized the industrialization of the types include: amorphous silicon TFT (a-Si TFT), polycrystalline silicon TFT (p-Si TFT), monocrystalline silicon TFT (c-Si) several. Currently the most widely used is a-Si TFT.
The fabrication process of a-Si TFT is to first sputter the gate material film on the borosilicate glass substrate, and then form the grid pattern after the mask exposure, the development and the dry etching. Step exposure machine for general mask exposure. The second step is to use PECVD method for continuous film formation, SiNx film, non doped a-Si film, phosphorus doped n+a-Si film. Then, the a-Si pattern of the TFT part is formed by mask exposure and dry etching. The third step is to form a transparent electrode (ITO film) by sputtering, and then to display the electrode pattern by mask exposure and wet etching. The contact hole pattern of the fourth step gate extreme insulation film is formed by mask exposure and dry etching method. The fifth step is to sputter AL into the film, with mask exposure, etching the source, drain and signal line pattern of TFT. Finally, the protective film is formed by PECVD method, and then the film is etched by mask exposure and dry etching. The protective film is used to protect the electrode and the electrode and the display electrode. So far, the whole process is completed.
TFT array technology is the key of TFT-LCD manufacturing process, and the most part of equipment investment. The entire process requires a high level of purification (e.g., level 10).
General Specification：
(1) Display format : 128 ´64dot-matrix ; 1/ 64 duty.
(2) Construction : STN LCD, COG Type
(3) Controller : S6B0724
(4) 3.0V single power input. Internal Built-in DC/DC converter for LCD driving.
(5) Width temperature type.
Parameter | Stand Value | Unit |
Dot size | 0.45(W) ´ 0.49(H) | mm |
Dot pitch | 0.475(W) ´ 0.515(H) | mm |
Viewing area | 65.5 (W) ´ 38.0(H) | mm |
Module size | 90.5(W) ´63.2(H) ´ 10.0 max (T) | mm |
Parameter | Symbol | Min | Max | Unit | |
Logic Circuit Supply Voltage | VDD-VSS | 3.0 | 3.3 | V | |
LCD Driving Voltage | VDD-VO | 8.2 | 8.6 | V | |
Input Voltage | VI | VSS | VDD | V | |
Normal temp. type | Operating Temp. | TOP | -10 | 60 | °C |
Storage Temp. | TSTG | -20 | 70 | °C | |
Parameter | Symbol | Condition | Min | Typ | Max | Unit | Note |
----- Electronic Characteristics ----- | |||||||
Logic Circuit Supply Voltage | VDD-VSS | -- | 3.0 | --- | 3.3 | V |
|
LCD Driving Voltage | VDD-VO | 25 °C | -- | 8.6 | -- | V |
|
Input Voltage | VIH | -- | 0.7 VDD | -- | VDD | V |
|
VIL | -- | VSS | -- | 0.3 VDD | V |
| |
Logic Supply Current | IDD | VDD =3.0V | -- | 40 | -- | uA |
|
----- Optical Characteristics ----- | |||||||
Contrast | CR | STN type |
| 8.6 |
|
|
|
Rise Time | tr | 25°C | -- | 140 | -- | ms | Note 2 |
Fall Time | tf | 25°C | -- | 240 | -- | ms | |
Viewing Angle Range | q f | 25°C & CR³2 | -- | 40 | -- |
Deg. | Note 3 |
q b | -- | 35 | -- | ||||
q l | -- | 35 | -- | ||||
q r | -- | 35 | -- | ||||
Frame Frequency | fF | 25°C | -- | 70 | -- | Hz |
|
----- LED Back-light(Green) Characteristics ----- | |||||||
Forward Voltage | VF | -- | -- | 3.0 | -- | V | Supply Voltage between A&K |
Forward Current | IF | VF=3.0V | -- | 15 | -- | mA |
|
Bare LED Luminous intensity | VF=3.0V | -- | -- | -- | cd/m2 |
| |
LCM Luminous intensity | VF=3.0V | -- |
| -- | cd/m2 |
| |
*************************************************************************
TFT-LCD technology, detailed process
Working principle of TFT-LCD liquid crystal display
The manufacturing process of thin film transistor liquid crystal display has the following parts: TFT array is formed on the TFT substrate; forming a color filter pattern and ITO conductive layer on the color filter substrate; with two substrates to form a liquid crystal box installation; peripheral circuit, backlight module assembly assembly.
1. process for forming TFT array on TFT substrate
TFT has realized the industrialization of the types include: amorphous silicon TFT (a-Si TFT), polycrystalline silicon TFT (p-Si TFT), monocrystalline silicon TFT (c-Si) several. Currently the most widely used is a-Si TFT.
The fabrication process of a-Si TFT is to first sputter the gate material film on the borosilicate glass substrate, and then form the grid pattern after the mask exposure, the development and the dry etching. Step exposure machine for general mask exposure. The second step is to use PECVD method for continuous film formation, SiNx film, non doped a-Si film, phosphorus doped n+a-Si film. Then, the a-Si pattern of the TFT part is formed by mask exposure and dry etching. The third step is to form a transparent electrode (ITO film) by sputtering, and then to display the electrode pattern by mask exposure and wet etching. The contact hole pattern of the fourth step gate extreme insulation film is formed by mask exposure and dry etching method. The fifth step is to sputter AL into the film, with mask exposure, etching the source, drain and signal line pattern of TFT. Finally, the protective film is formed by PECVD method, and then the film is etched by mask exposure and dry etching. The protective film is used to protect the electrode and the electrode and the display electrode. So far, the whole process is completed.
TFT array technology is the key of TFT-LCD manufacturing process, and the most part of equipment investment. The entire process requires a high level of purification (e.g., level 10).
